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| EE-SY110/113/171 Compact Reflective Phototransistor Output Low-profiled model with an overall height of only 3 mm (EE-SY171) Models with a circuit integrated into molded housing provide special cost advantages (EE-SY110/113) Model with a filter reduces effects of external visible light (EE-SY113) Ordering Information Appearance Sensing method Sensing Sensing object distance Reflective 3.5 mm 4.4 mm 5 mm White paper with reflection factor of 90% Output configuration Weight Part number EE-SY171 EE-SY113 EE-SY110 Phototransistor 0.3 g Approx. 0.5 g Approx. 0.4 g Specifications ABSOLUTE MAXIMUM RATINGS (TA = 25C) Item Input Forward current Pulse forward current Reverse voltage Output Collector-emitter voltage Collector current Collector dissipation Ambient temperature Operating Storage Symbol IF IFP VR VCEO IC PC Topr Tstg Rated value 50 mA* 1 A** 4V 30 V 20 mA 100 mW* -40C to 85C (-40F to 185F) -40C to 85C (-40F to 185F) *Refer to Engineering Data if the ambient temperature is not within the normal room temperature range. **This value was measured with a pulse width of 10 s and a repeating frequency of 100 Hz. EE-SY110/113/171 EE-SY110/113/171 CHARACTERISTICS (TA = 25C) Item Emitter Forward voltage Reverse current Peak emission wavelength Receiver Dark current Peak spectral sensitivity wavelength Combination Light current Symbol VF IR p(L) ID p(P) EE-SY110 Value 1.5 V max. 10 A max. 940 nm typ. 200 nA max. 850 nm typ. Condition IF = 30 mA VR = 4 V IF = 20 mA VCE = 10 V 0lx VCE = 10 V IF = 20 mA VCE = 10 V White paper with a reflection factor of 90% at a distance of 5 mm IF = 20 mA VCE = 10 V* VCC = 5 V RL = 1 k IL = 1 mA EE-SY171 Value 1.5 V max. 10 A max. 940 nm typ. 200 nA max. 850 nm typ. 50 to 500 A Condition IF = 30 mA VR = 4 V IF = 20 mA VCE = 10 V 0lx VCE = 10 V IF = 20 mA VCE = 10 V White paper with a reflection factor of 90% at a distance of 3.5 mm IF = 20 mA VCE = 10 V* VCC = 5 V RL = 1 k IL = 1 mA EE-SY113 Value 1.5 V max. 10 A max. 940 nm typ. 200 nA max. 850 nm typ. Condition IF = 30 mA VR = 4 V IF = 20 mA VCE = 10 V 0lx VCE = 10 V IF = 20 mA VCE = 10 V White paper with a reflection factor of 90% at a distance of 4.4 mm IF = 20 mA VCE = 10 V* VCC = 5 V RL = 1 k IL = 1 mA IL 200 to 2,000 A 160 to 1,600 A Leakage current Rising time** Falling time** ILEAK tr tf 2 A max. 30 s typ. 30 s typ. 200 nA max. 30 s typ. 30 s typ. 2 A max. 30 s typ. 30 s typ. *The sensing object reflects no light. **The following illustrations show the rising time, tr, and the falling time, tf. Sensing object Input 0 90% 10% tr tf RL t Input VCC Output 0 t Output Engineering Data Note: The operating conditions of the photomicrosensor must be within the absolute maximum rating ranges. TEMPERATURE CHARACTERISTICS Forward current I F (mA) IF, Pc INPUT CHARACTERISTICS (TYPICAL) Forward current I F (mA) TA = --30 C TA = +25 C TA = +70 C Ambient temperature TA (C) Forward voltage VF (V) Collector dissipation PC (mW) EE-SY110/113/171 EE-SY110/113/171 INPUT/OUTPUT CHARACTERISTICS (TYPICAL) EE-SY110 VCE = 10 V Sensing object: White paper with a reflection factor of 90% Sensing distance: 5 mm EE-SY171 TA = 25 C VCE = 10 V Sensing object: Paper with a reflection factor of 90% Sensing distance: 5 mm Light current I L ( A) Forward current IF (mA) Light current I L ( A) Forward current IF (mA) OUTPUT CHARACTERISTICS (TYPICAL) EE-SY110 IF = 40 mA EE-SY171 TA = 25 C Sensing object: Paper with a reflection factor of 90% Sensing distance: 3.5 mm IF = 40 mA Light current I L (mA) IF = 30 mA Light current I L ( A) IF = 30 mA IF = 20 mA IF = 20 mA IF = 10 mA White paper (reflection factor: 90%) Sensing distance:5 mm IF =10 mA Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) LIGHT CURRENT TEMPERATURE DEPENDENCY (TYPICAL) EE-SY110/113 Relative light current IL (%) Sensing object: White paper with a reflection factor of 90% EE-SY171 Sensing object: Paper with a reflection factor of 90% Based on the IL value at 25 C as 100%. Relative light current IL (%) IF = 20 mA VCE = 10 V Sending distance: 5 mm IF = 20 mA VCE = 10 V Sending distance: 3.5 mm Ambient temperature TA (C) Ambient temperature TA (C) EE-SY110/113/171 EE-SY110/113/171 LEAKAGE CURRENT EE-SY171 Current leakage I LEAK (nA) TA = 25 C VCE = 10 V Sensing object: Object with no light reflection Sensing distance: Infinite CHARACTERISTICS (TYPICAL) SENSING DISTANCE EE-SY110 CHARACTERISTICS 1 (TYPICAL) TA = 25 C IF = 20 mA VCE = 10 V Sensing object: White paper with a reflection factor of 90% Light current I L ( A) (a) (b) (c) (a): 15 x 15 mm2 (b): 10 x 10 mm2 (c): 5 x 5 mm2 (d): 2 x 2 mm2 (d) Forward current IF (mA) Distance d (mm) SENSING DISTANCE EE-SY171 CHARACTERISTICS 2 (TYPICAL) TA = 25 C IF = 20 mA VCE = 10 V SENSING DISTANCE EE-SY171 TA = 25 C IF = 20 mA VCE = 10 V CHARACTERISTICS (TYPICAL) d Light current I L ( A) (a) (b) (c) (d) (e) Light current I L ( A) Paper with a reflection factor of 90% Tracing paper OHP sheet Black paper a: Aluminum b: White paper with a reflection factor of 90% c: Pink paper d: OHP e: Tracing paper f: Black sponge (f) Distance d (mm) Distance d (mm) EE-SY110 Relative light current IL (%) TA = 25 C IF = 20 mA VCE = 10 V d1 = 3 mm EE-SY171 Relative light current IL (%) TA = 25 C IF = 20 mA VCE = 10 V Sensing object: Paper with a reflection factor of 90% d1 = 3 mm d1 = 4 mm d1 = 5 mm d2 d1 d1 = 5 mm d1 d2 Moving direction Distance d2 (mm) Distance d2 (mm) EE-SY110/113/171 EE-SY110/113/171 SWITCHING CHARACTERISTICS (RISE TIME, TYPICAL) EE-SY110/113 TA = 25 C VCE = 10 V EE-SY171 TA = 25 C VCE = 10 V Sensing distance: 3.5 mm Sensing object: Paper with a reflection factor of 90% RL = 4.7 k RL = 4.7 k RL = 1 k RL = 470 RL=100 d Rising time tr ( s) Rising time tr ( s) RL = 1 k IL Input RL Vcc Input 0 t RL = 470 RL = 100 OUT Output 0 tf 90% 10% Light current IL (A) Light current IL (A) SWITCHING CHARACTERISTICS (FALL TIME, TYPICAL) EE-SY110/113 TA = 25 C VCE = 10 V EE-SY171 TA = 25 C VCE = 10 V Sensing distance: 3.5 mm Sensing object: Paper with a reflection factor of 90% RL = 4.7 k Falling time tf ( s) d RL = 1 k RL = 470 RL = 100 IL Input Vcc Input 0 t 10% Falling time tf ( s) RL = 4.7 k RL = 1 k RL = 470 RL = 100 OUT Output 90% 0 tr t Light current IL (A) Light current IL (A) SENSING ANGLE CHARACTERISTICS (TYPICAL) EE-SY110 Relative light current IL (%) VCE = 10 V IF = 20 mA Sensing distance: 5 mm EE-SY171 Relative light current IL (%) Sensing object: White paper with a reflection factor of 90% - 0 + TA = 2 5 C IF = 20 mA VCE = 10 V Sensing distance: 5 mm - 0 + d Sensing object: Paper with a reflection factor of 90% d Angle deviation () Angle deviation () EE-SY110/113/171 EE-SY110/113/171 Dimensions Unit: mm (inch) EE-SY171 Two, 1.2 dia. Two, 2 dia. E 4.2 C 15 3 5.5 1 K Four, 0.5 K E 14 3 Anode mark A 2.5 A Internal Circuit (All Models) C Terminal No. A K C E 0 to 30 Four, 0.25 Name Anode Cathode Collector Emitter EE-SY113 12 0.7 K 6.2 2.5 A 15.2 E C Four, 0.5 6 2.4 15 to 18 EE-SY110 12 4.5 E 4.6 C 2.5 Four, R1.5 K 2.5 0.6 A Four, 0.5 15.20.2 1.9 4.8 3 8 --0.2 15 to 18 +0 0.6 0.5 Four, 0.25 = 0 to 13 EE-SY110/113/171 EE-SY110/113/171 Precautions Refer to the Technical Information Section for general precautions. NOTE: DIMENSIONS SHOWN ARE IN MILLIMETERS. To convert millimeters to inches divide by 25.4. OMRON ELECTRONICS, INC. One East Commerce Drive Schaumburg, IL 60173 OMRON CANADA, INC. 885 Milner Avenue Scarborough, Ontario M1B 5V8 1-800-55-OMRON Cat. No. EO5DAX4 1/99 Specifications subject to change without notice. 416-286-6465 Printed in U.S.A. |
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